Title :
Gate oxide rupture localization by photon emission microscopy with the combination of Lock-in IR-OBIRCH
Author :
Chunlei Wu ; Suying Yao
Author_Institution :
Sch. of Electron. Inf. Eng., Tianjin Univ., Tianjin, China
fDate :
June 30 2014-July 4 2014
Abstract :
There are many failure analysis cases are induced by the gate oxide rupture. It is a common and important failure mechanism in failure analysis. Photon emission microscopy with the combination of Lock-in IR-OBIRCH are very effective to localize the gate oxide rupture in MOS transistor, which can decrease analysis cycle time and improve success rates remarkably. In this paper, some different cases are presented to show how to locate the gate oxide rupture in MOS transistor accurately and quickly by photon emission microscopy with the combination of Lock-in IR-OBIRCH.
Keywords :
MOSFET; OBIC; failure analysis; fracture; photoelectron microscopy; MOS transistor; analysis cycle time; failure analysis; failure mechanism; gate oxide rupture localization; lock-in IR-OBIRCH combination; lock-in infrared optical beam induced resistance change; photon emission microscopy; success rate improvement; Electric breakdown; Failure analysis; Integrated circuits; Layout; Logic gates; MOSFET;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2014 IEEE 21st International Symposium on the
Conference_Location :
Marina Bay Sands
Print_ISBN :
978-1-4799-3931-2
DOI :
10.1109/IPFA.2014.6898121
