• DocumentCode
    235762
  • Title

    Hot carrier injection on back biasing double-gate FinFET with 10 and 25-nm fin width

  • Author

    Wen-Teng Chang ; Li-Gong Cin ; Wen-Kuan Yeh ; Po-Ying Chen

  • Author_Institution
    Dept. of Electr. Eng., Nat. Univ. of Kaohsiung, Kaohsiung, Taiwan
  • fYear
    2014
  • fDate
    June 30 2014-July 4 2014
  • Firstpage
    211
  • Lastpage
    214
  • Abstract
    The effects of hot carrier injection on double-gate FinFETs with fin widths (Wfin) of 10 and 25 nm with positive and negative back biases are compared in this study. The FinFETs with a positive bias and narrow Wfin exhibit a large current tuning range but experiences high degradation after stress. By contrast, a negative back bias alleviates degradation but also eliminates the drive current.
  • Keywords
    MOSFET; hot carriers; back biasing double-gate FinFET; current tuning range; drive current; hot carrier injection; negative back bias; positive back bias; size 10 nm; size 25 nm; Decision support systems; Failure analysis; Integrated circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2014 IEEE 21st International Symposium on the
  • Conference_Location
    Marina Bay Sands
  • ISSN
    1946-1542
  • Print_ISBN
    978-1-4799-3931-2
  • Type

    conf

  • DOI
    10.1109/IPFA.2014.6898122
  • Filename
    6898122
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=235762