Title :
Junction induced variation and reliability for ultra-thin-body and bulk oxide MOSFETs
Author :
Wen-Kuan Yeh ; Wen-Teng Chang ; Po-Ying Chen ; Cheng-Li Lin
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Kaohsiung, Kaohsiung, Taiwan
fDate :
June 30 2014-July 4 2014
Abstract :
In this work, we investigate the impact of junction dose distribution (LDD/halo) on device characteristic variation and symmetry for ultra-thin body and bulk oxide silicon on insulator (UTBB SOI) nMOSFET. The device performance and hot carrier induced degradations have also been examined. High junction doping profile will enhances the device´s driving capability and sub-threshold swing, but makes the transistor forward and reverse characteristics unsymmetrical. Compared to high dose junction profile UTBB-SOI device, low dose junction profile device is less sensitive to substrate bias effect. After hot carrier stressing, low junction dose device with lower impact ionization exhibits better device reliability than high junction dose one.
Keywords :
MOSFET; hot carriers; semiconductor device reliability; silicon-on-insulator; bulk oxide MOSFET; device characteristic variation; device symmetry; driving capability; hot carrier induced degradation; junction dose distribution; junction induced reliability; junction induced variation; silicon-on-insulator nMOSFET; subthreshold swing; ultrathin body MOSFET; unsymmetrical transistor characteristic; Degradation; Hot carriers; Junctions; MOSFET; MOSFET circuits; Substrates; Threshold voltage; STRESSING; UTBB-SOI VARIANCE;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2014 IEEE 21st International Symposium on the
Conference_Location :
Marina Bay Sands
Print_ISBN :
978-1-4799-3931-2
DOI :
10.1109/IPFA.2014.6898123
