DocumentCode
235769
Title
A stain chemical etching rate study and used to detect implant defect
Author
Miao Wu ; Yi Che
Author_Institution
Product Anal. Eng. of Quality Dept., Freescale Semicond. (China) Ltd., Tianjin, China
fYear
2014
fDate
June 30 2014-July 4 2014
Firstpage
13
Lastpage
16
Abstract
In this paper, a chemical is used to stain the implant profile. Its etching rate to different dope type and density is studied by performing cross-section on three typical devices and then dipping in the chemical for staining. Due to etching rate difference, the method is shown to be effective in localizing implant profile in the Si active area. Meanwhile real failure analysis cases are presented, and the stain chemical is proved effective in localizing non-uniform implantation.
Keywords
elemental semiconductors; etching; failure analysis; semiconductor doping; silicon; Si; Si active area; dope density; dope type; failure analysis; implant defect detection; implant profile; nonuniform implantation; stain chemical etching rate; Decision support systems; Failure analysis; Implants; Integrated circuits; etch rate; failure analysis; implant; stain chemical;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2014 IEEE 21st International Symposium on the
Conference_Location
Marina Bay Sands
ISSN
1946-1542
Print_ISBN
978-1-4799-3931-2
Type
conf
DOI
10.1109/IPFA.2014.6898125
Filename
6898125
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