DocumentCode
235796
Title
Idss failure investigated by SIMS profiling and TCAD simulation
Author
Lei Zhu ; Bai, M.B. ; Wang, X.P. ; Huang, Y.H. ; Ong, Kenny ; Sumarlina, A.B.S. ; Park, W.G. ; Mo, Z.Q. ; Zheng, Peck Y. ; Zhao, Si Ping ; Lam, James
Author_Institution
GLOBALFOUNDRIES Singapore Pte Ltd., Singapore, Singapore
fYear
2014
fDate
June 30 2014-July 4 2014
Firstpage
186
Lastpage
190
Abstract
A Power MOSFET Idss failure case was studied by SIMS profiling that showed a deeper junction depth between the body/source. TCAD simulation was used to understand the mechanism of the failure.
Keywords
failure analysis; power MOSFET; secondary ion mass spectroscopy; semiconductor device reliability; technology CAD (electronics); SIMS profiling; TCAD simulation; failure mechanism; junction depth; power MOSFET Idss failure; Analytical models; Decision support systems; Failure analysis; Integrated circuit modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2014 IEEE 21st International Symposium on the
Conference_Location
Marina Bay Sands
ISSN
1946-1542
Print_ISBN
978-1-4799-3931-2
Type
conf
DOI
10.1109/IPFA.2014.6898139
Filename
6898139
Link To Document