PS-4 GHZ Contour Extensional Mode Aluminum Nitride MEMS Resonators

Author

Stephanou, P.J. ; Pisano, A.P.

Author_Institution

Berkeley Sensors & Actuator Center, California Univ., Berkeley, CA

fYear

2006

fDate

2-6 Oct. 2006

Firstpage

2401

Lastpage

2404

Abstract

This work presents higher-order contour mode piezoelectric AlN MEMS resonators with lithographically defined GHz operating frequencies. By selectively patterning the transduction electrodes and routing the electrical excitation waveform, the resonant frequency of the device is uncoupled from the overall dimensions of the AlN plate and spurious electrical responses are suppressed over a wide frequency range. Resonators employing either parallel or coplanar ground and signal electrode pairs have been developed. The design has been validated by demonstrating a 1.28 GHz resonator with a 231 Omega motional resistance and a Q factor over 1,400 when tested in air

Keywords

aluminium compounds; crystal resonators; lithography; microelectrodes; micromechanical resonators; ultrasonic transducers; 1.28 GHz; 231 ohm; AlN; GHz operating frequencies; Q factor; aluminum nitride MEMS resonators; contour mode piezoelectric AlN MEMS resonators; coplanar ground-signal electrode pairs; electrical excitation waveform routing; lithography; motional resistance; parallel ground-signal electrode pairs; transduction electrode selective patterning; uncoupled device resonant frequency; Aluminum nitride; Electric resistance; Electrodes; Micromechanical devices; Optical resonators; Piezoelectric devices; Radio frequency; Resonant frequency; Resonator filters; Routing;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 2006. IEEE

Conference_Location

Vancouver, BC

ISSN

1051-0117

Print_ISBN

1-4244-0201-8

Electronic_ISBN

1051-0117

Type

conf

DOI

10.1109/ULTSYM.2006.581

Filename

4152437