Title :
PS-4 GHZ Contour Extensional Mode Aluminum Nitride MEMS Resonators
Author :
Stephanou, P.J. ; Pisano, A.P.
Author_Institution :
Berkeley Sensors & Actuator Center, California Univ., Berkeley, CA
Abstract :
This work presents higher-order contour mode piezoelectric AlN MEMS resonators with lithographically defined GHz operating frequencies. By selectively patterning the transduction electrodes and routing the electrical excitation waveform, the resonant frequency of the device is uncoupled from the overall dimensions of the AlN plate and spurious electrical responses are suppressed over a wide frequency range. Resonators employing either parallel or coplanar ground and signal electrode pairs have been developed. The design has been validated by demonstrating a 1.28 GHz resonator with a 231 Omega motional resistance and a Q factor over 1,400 when tested in air
Keywords :
aluminium compounds; crystal resonators; lithography; microelectrodes; micromechanical resonators; ultrasonic transducers; 1.28 GHz; 231 ohm; AlN; GHz operating frequencies; Q factor; aluminum nitride MEMS resonators; contour mode piezoelectric AlN MEMS resonators; coplanar ground-signal electrode pairs; electrical excitation waveform routing; lithography; motional resistance; parallel ground-signal electrode pairs; transduction electrode selective patterning; uncoupled device resonant frequency; Aluminum nitride; Electric resistance; Electrodes; Micromechanical devices; Optical resonators; Piezoelectric devices; Radio frequency; Resonant frequency; Resonator filters; Routing;
Conference_Titel :
Ultrasonics Symposium, 2006. IEEE
Conference_Location :
Vancouver, BC
Print_ISBN :
1-4244-0201-8
Electronic_ISBN :
1051-0117
DOI :
10.1109/ULTSYM.2006.581
