Title :
Localized FIB delayering on advanced process technologies
Author :
Donnet, David ; Sidorov, Oleg ; Carleson, Pete ; Rue, Chad ; Alvis, Roger ; Madala, Sridhar
Author_Institution :
FEI Co., Hillsboro, OR, USA
fDate :
June 30 2014-July 4 2014
Abstract :
Good control over beam and chemistry conditions are required to enable uniform delayering of advanced process technologies in the FIB. The introduction of newer, thinner and more beam sensitive materials have made delayering more complicated. We shall introduce a new chemistry for device delayering and present results from both Ga and Xe ion beams showing its improvement over existing chemistries.
Keywords :
focused ion beam technology; gallium; integrated circuit manufacture; integrated circuit reliability; ion beams; sputter etching; xenon; Ga; advanced process technologies; beam sensitive materials; focused ion beam technology; ion beams; localized FIB delayering; Chemistry; Copper; Dielectrics; Failure analysis; Materials; Milling;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2014 IEEE 21st International Symposium on the
Conference_Location :
Marina Bay Sands
Print_ISBN :
978-1-4799-3931-2
DOI :
10.1109/IPFA.2014.6898144
