Title :
A new robust power MOSFET family in the voltage range 80 V-150 V with superior low R/sub Dson/, excellent switching properties and improved body diode
Author :
Schogl, A. ; Hirler, Franz ; Ropohl, J. ; Hiller, Uli ; Rosch, Maximilian ; Soufi-Amlashi, N. ; Siemieniec, Ralf
Author_Institution :
Infineon Technol. Austria AG
Abstract :
A new 100-V power MOSFET of the OPTIMOSreg 2-family is described. The application of compensation principles leads to a device technology that combines low RON with outstanding switching properties. The technology also offers small gate charge QG and gate resistance RG. In addition, the internal body diode, if acting as free-wheeling diode, reveals a soft reverse recovery with a small reverse recovery charge QRR resulting in relatively small voltage overshoots. Therefore, the technology is particularly suitable for a variety of applications including highly efficient DC-DC and AC-DC converters, telecommunication and server topologies, as well as motor control
Keywords :
AC-DC power convertors; DC-DC power convertors; diodes; network topology; power MOSFET; switching convertors; 80 to 150 V; AC-DC converters; DC-DC converters; OPTIMOSreg; free-wheeling diode; gate resistance; motor control; power MOSFET; reverse recovery charge; server topologies; switching properties; Circuit topology; Immune system; MOSFET circuits; Motor drives; Power MOSFET; Robustness; Semiconductor diodes; Switching loss; Testing; Voltage; MOSFET; Power semiconductor device; device characterization; free-wheeling diode; industrial application;
Conference_Titel :
Power Electronics and Applications, 2005 European Conference on
Conference_Location :
Dresden
Print_ISBN :
90-75815-09-3
DOI :
10.1109/EPE.2005.219377
