A new robust power MOSFET family in the voltage range 80 V-150 V with superior low R/sub Dson/, excellent switching properties and improved body diode

Author

Schogl, A. ; Hirler, Franz ; Ropohl, J. ; Hiller, Uli ; Rosch, Maximilian ; Soufi-Amlashi, N. ; Siemieniec, Ralf

Author_Institution

Infineon Technol. Austria AG

fYear

2005

fDate

11-14 Sept. 2005

Abstract

A new 100-V power MOSFET of the OPTIMOSreg 2-family is described. The application of compensation principles leads to a device technology that combines low R_ON with outstanding switching properties. The technology also offers small gate charge Q_G and gate resistance R_G. In addition, the internal body diode, if acting as free-wheeling diode, reveals a soft reverse recovery with a small reverse recovery charge Q_RR resulting in relatively small voltage overshoots. Therefore, the technology is particularly suitable for a variety of applications including highly efficient DC-DC and AC-DC converters, telecommunication and server topologies, as well as motor control

Keywords

AC-DC power convertors; DC-DC power convertors; diodes; network topology; power MOSFET; switching convertors; 80 to 150 V; AC-DC converters; DC-DC converters; OPTIMOSreg; free-wheeling diode; gate resistance; motor control; power MOSFET; reverse recovery charge; server topologies; switching properties; Circuit topology; Immune system; MOSFET circuits; Motor drives; Power MOSFET; Robustness; Semiconductor diodes; Switching loss; Testing; Voltage; MOSFET; Power semiconductor device; device characterization; free-wheeling diode; industrial application;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications, 2005 European Conference on

Conference_Location

Dresden

Print_ISBN

90-75815-09-3

Type

conf

DOI

10.1109/EPE.2005.219377

Filename

1665567