Title :
P3O-6 Basic Study on SAW Device with Semiconductor Layer as IDTs and Control Means for Variable Operation
Author :
Hohkawa, K. ; Mizusawa, T. ; Koh, K. ; Nishimura, K. ; Shigekawa, N.
Author_Institution :
Fac. of Eng., Kanagawa Inst. of Technol., Atsugi
Abstract :
This paper studies monolithic realization of SAW and layer wave devices using semiconductor layer in GaN/Al2O3. We try to fabricate transducer and control means with N+ layer and AlGaN/GaN hetero-structures. Experimental studies clarified that N + layer is effectively used as IDTs and the hetero structure is useful for realizing field effect variable SAW devices monolithically
Keywords :
III-V semiconductors; III-VI semiconductors; aluminium compounds; gallium compounds; interdigital transducers; nitrogen; semiconductor thin films; surface acoustic wave devices; AlGaN-GaN; GaN-Al2O3; IDT; N+; SAW device; interdigital transducer; layer wave devices; semiconductor layer; surface acoustic waves; transducer fabrication; variable operation; Acoustic waves; Aluminum gallium nitride; Aluminum oxide; Electrodes; Gallium nitride; HEMTs; Piezoelectric films; Semiconductor films; Surface acoustic wave devices; Surface acoustic waves;
Conference_Titel :
Ultrasonics Symposium, 2006. IEEE
Conference_Location :
Vancouver, BC
Print_ISBN :
1-4244-0201-8
Electronic_ISBN :
1051-0117
DOI :
10.1109/ULTSYM.2006.585
