Title :
A physically based analytical modeling of threshold voltage control for fully-depleted SOI double gate NMOS-PMOS Flexible-FET
Author :
Chowdhury, Nadim ; Azim, Zubair Al ; Ahmed, Imtiaz ; Niaz, Iftikhar Ahmad ; Alam, Md Hasibul ; Khosru, Quazi Deen Mohd
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
Abstract :
In this work, we propose an explicit analytical equation to show the variation of top gate threshold voltage with respect to the JFET bottom gate voltage for a Flexible Threshold Voltage Field Effect Transistor (Flexible-FET) by solving 2-D Poisson´s equation with appropriate boundary conditions, incorporating Young´s parabolic approximation. The proposed model illustrates excellent match with the experimental results for both n-channel and p-channel 180nm Flexible-FETs. Threshold voltage variation with several important device parameters (oxide and silicon channel thickness, doping concentration) is observed which yields qualitative matching with results obtained from SILVACO simulations.
Keywords :
MOSFET; silicon-on-insulator; voltage control; 2-D Poisson equation; JFET bottom gate voltage; SILVACO simulations; Young parabolic approximation; fully-depleted SOI double gate NMOS-PMOS flexible-FET; n-channel; p-channel; physical based analytical modeling; qualitative matching; size 180 nm; threshold voltage control; Analytical models; Electric potential; Logic gates; MOSFETs; Semiconductor process modeling; Silicon; Threshold voltage;
Conference_Titel :
Electro/Information Technology (EIT), 2012 IEEE International Conference on
Conference_Location :
Indianapolis, IN
Print_ISBN :
978-1-4673-0819-9
DOI :
10.1109/EIT.2012.6220737
