Ion implant technology for 6H-SiC MESFET´s digital ICs

Author

Lam, M.P. ; Kornegay, K.T. ; Cooper, J.A., Jr. ; Melloch, M.R.

Author_Institution

Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA

fYear

1996

fDate

26-26 June 1996

Firstpage

158

Lastpage

159

Abstract

SiC devices are capable of operating at very high temperature. Since MESFETs do not suffer from oxide degradation issues, they are suitable for high temperature electronics. However, conventional mesa isolation structures used in these devices make it difficult for circuit designs in high-density integration schemes. MESFETs fabricated on high resistivity 6H-SiC substrate have demonstrated good RF performance. Our group has also investigated the possibility of creating a highly resistive layer by ion implantation. In this paper, we describe a planar MESFET technology used to fabricate digital logic circuits.

Keywords

MESFET integrated circuits; field effect logic circuits; integrated circuit technology; ion implantation; semiconductor materials; silicon compounds; 6H-SiC MESFET digital IC; SiC; fabrication; high resistivity substrate; high temperature electronics; ion implantation; logic circuit; planar technology; Circuit synthesis; Conductivity; Degradation; Implants; Ion implantation; Isolation technology; MESFETs; Radio frequency; Silicon carbide; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1996. Digest. 54th Annual

Conference_Location

Santa Barbara, CA, USA

Print_ISBN

0-7803-3358-6

Type

conf

DOI

10.1109/DRC.1996.546419

Filename

546419