Ion implant technology for 6H-SiC MESFET´s digital ICs

SiC devices are capable of operating at very high temperature. Since MESFETs do not suffer from oxide degradation issues, they are suitable for high temperature electronics. However, conventional mesa isolation structures used in these devices make it difficult for circuit designs in high-density integration schemes. MESFETs fabricated on high resistivity 6H-SiC substrate have demonstrated good RF performance. Our group has also investigated the possibility of creating a highly resistive layer by ion implantation. In this paper, we describe a planar MESFET technology used to fabricate digital logic circuits.