Title :
Fabrication and characterization of a 83 MHz high temperature /spl beta/-SiC MESFET operational amplifier with an AlN isolation layer on
Author :
Diogu, K.K. ; Harris, G.L. ; Mahajan, A. ; Adesida, I. ; Moeller, D.F. ; Bertram, R.A.
Author_Institution :
Sch. of Eng., Howard Univ., Washington, DC, USA
Abstract :
Summary form only given. The fabrication of a high temperature analog integrated operational amplifier implemented in /spl beta/-SiC technology using depletion-only MESFETs is presented. The operational amplifier is implemented with 1 /spl mu/m gate geometries using direct write e-beam lithography to achieve high frequency operation. For the first time, compound MESFETs have been used as current sources and sinks at the various stages of the operational amplifier to provide high output impedance and hence increased circuit gain, while maintaining a reasonable unity gain frequency. Circuit design/simulation methods, circuit layout, device modeling, device parameter extraction methods and operational amplifier circuit fabrication techniques used to achieve excellent operational amplifier characteristics will be discussed in detail.
Keywords :
HF amplifiers; MESFET integrated circuits; aluminium compounds; field effect analogue integrated circuits; high-temperature techniques; integrated circuit technology; isolation technology; operational amplifiers; semiconductor materials; silicon compounds; /spl beta/-SiC technology; 83 MHz; AlN; AlN isolation layer; SiC; circuit design; circuit gain; circuit layout; circuit simulation; depletion-only MESFET; device modeling; direct write e-beam lithography; fabrication; high frequency operation; high temperature analog integrated operational amplifier; output impedance; parameter extraction; unity gain frequency; Circuit simulation; Circuit synthesis; Fabrication; Frequency; Geometry; Impedance; Lithography; MESFETs; Operational amplifiers; Temperature;
Conference_Titel :
Device Research Conference, 1996. Digest. 54th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-3358-6
DOI :
10.1109/DRC.1996.546420
