Title :
Demonstration of a 6H-SiC CMOS technology
Author :
Slater, D.B., Jr. ; Johnson, G.M. ; Lipkin, L.A. ; Suvorov, A.V. ; Palmour, J.W.
Author_Institution :
Cree Res. Inc., Durham, NC, USA
Abstract :
Recent improvements in 6H-SiC enhancement-mode NMOS and PMOS device fabrication and performance have resulted in operational circuits up to 500/spl deg/C. These developments have now led to the first demonstration of monolithically integrated complementary MOSFET (CMOS) circuits in SiC. CMOS is an attractive technology because it is readily adaptable for mixed analog and digital applications. The availability of current source (active) loads makes it possible to generate large voltage gains with relatively small supply voltages and currents which has not been possible in SiC until now. CMOS also provides for low power (stand-by) digital circuits. Lower supply voltage operation and reduced circuit design complexity will enhance high temperature reliability.
Keywords :
CMOS integrated circuits; integrated circuit technology; semiconductor materials; silicon compounds; 500 C; 6H-SiC CMOS technology; SiC; circuit design; current source load; enhancement-mode device fabrication; high temperature reliability; low power digital circuit; low voltage operation; monolithically integrated complementary MOSFET circuit; voltage gain; Availability; CMOS digital integrated circuits; CMOS technology; Current supplies; Fabrication; Integrated circuit technology; MOS devices; MOSFET circuits; Silicon carbide; Voltage;
Conference_Titel :
Device Research Conference, 1996. Digest. 54th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-3358-6
DOI :
10.1109/DRC.1996.546421
