Vertical multi-bit resonant tunneling diode memory cell

Author

van der Wagt, J.P. ; Tang, H. ; Broekaert, T.P.E. ; Kao, Y.C. ; Beam, E.A., III

Author_Institution

Corp. R&D, Texas Instrum. Inc., Dallas, TX, USA

fYear

1996

fDate

26-26 June 1996

Firstpage

168

Lastpage

169

Abstract

We propose and demonstrate a new resonant-tunneling diode (RTD) based memory cell in which bits are stacked vertically while their addressing requires only two physical contacts to the vertically integrated RTDs (VIRTDs). Toward meeting the ultra low static power requirements we have developed record low current density (down to 0.16 A/cm2) InP based RTDs with 300 K peak-to-valley current ratios (PVCRs) ranging from 2.9 to 18.

Keywords

current density; resonant tunnelling diodes; semiconductor storage; InP; InP based RTDs; current density; resonant tunneling diode memory cell; ultra low static power requirements; vertical multi-bit RTD memory cell; vertically integrated RTDs; Capacitance; Contacts; Current density; Diodes; FETs; Frequency; Indium phosphide; Resonant tunneling devices; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1996. Digest. 54th Annual

Conference_Location

Santa Barbara, CA, USA

Print_ISBN

0-7803-3358-6

Type

conf

DOI

10.1109/DRC.1996.546422

Filename

546422

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2358203