Title :
Vertical multi-bit resonant tunneling diode memory cell
Author :
van der Wagt, J.P. ; Tang, H. ; Broekaert, T.P.E. ; Kao, Y.C. ; Beam, E.A., III
Author_Institution :
Corp. R&D, Texas Instrum. Inc., Dallas, TX, USA
Abstract :
We propose and demonstrate a new resonant-tunneling diode (RTD) based memory cell in which bits are stacked vertically while their addressing requires only two physical contacts to the vertically integrated RTDs (VIRTDs). Toward meeting the ultra low static power requirements we have developed record low current density (down to 0.16 A/cm2) InP based RTDs with 300 K peak-to-valley current ratios (PVCRs) ranging from 2.9 to 18.
Keywords :
current density; resonant tunnelling diodes; semiconductor storage; InP; InP based RTDs; current density; resonant tunneling diode memory cell; ultra low static power requirements; vertical multi-bit RTD memory cell; vertically integrated RTDs; Capacitance; Contacts; Current density; Diodes; FETs; Frequency; Indium phosphide; Resonant tunneling devices; Switches; Voltage;
Conference_Titel :
Device Research Conference, 1996. Digest. 54th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-3358-6
DOI :
10.1109/DRC.1996.546422
