Experimentally verified quantum device simulations based on multiband models, Hartree self-consistency, and scattering assisted charging

Author

Lake, R. ; Klimeck, G. ; Bowen, R.C. ; Fernando, C. ; Jovanovic, D. ; Blanks, D. ; Moise, T.S. ; Kao, Y.C. ; Leng, M. ; Frensley, W.R.

Author_Institution

Corp. R&D., Texas Instrum. Inc., Dallas, TX, USA

fYear

1996

fDate

26-26 June 1996

Firstpage

174

Lastpage

175

Abstract

Accurate predictions of the I-V characteristics of Esaki diodes, resonant tunneling diodes (RTD), and resonant interband tunneling diodes (RITD) require sophisticated models of bandstructure, charging, and scattering. We present direct comparisons of experimental and simulation data based on single, two, and 10 band models and the world´s first calculation of the electrostatic potential obtained self-consistently with scattering-assisted charging. This charge results from the incoherent scattering off of alloy disorder, interface roughness, acoustic phonons and polar-optical phonons.

Keywords

SCF calculations; quantum interference devices; resonant tunnelling diodes; semiconductor device models; Esaki diode; Hartree self-consistency; I-V characteristics; acoustic phonons; alloy disorder; band structure; charging; electrostatic potential; incoherent scattering; interface roughness; multiband model; polar-optical phonons; quantum device simulation; resonant interband tunneling diode; resonant tunneling diode; Acoustic scattering; Diodes; Light scattering; Linear discriminant analysis; Optical scattering; Particle scattering; Phonons; Predictive models; Resonance light scattering; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1996. Digest. 54th Annual

Conference_Location

Santa Barbara, CA, USA

Print_ISBN

0-7803-3358-6

Type

conf

DOI

10.1109/DRC.1996.546425

Filename

546425