Single electron transistors (SETs) with Nb/Nb oxides system fabricated by atomic force microscope (AFM) nano-oxidation process

Author

Shirakashi, J. ; Ishii, M. ; Matsumoto, K. ; Miura, N. ; Konagai, M.

Author_Institution

Electrotech. Lab., Ibaraki, Japan

fYear

1996

fDate

26-26 June 1996

Firstpage

182

Lastpage

183

Abstract

Summary form only given. We present the fabrication and characterization results of metal-based single electron transistors (SETs) with niobium (Nb)/Nb oxides system, Several types of ultra-small tunnel junction devices, which include diodes with double and triple junctions and SETs with side gate structure, were fabricated by atomic force microscope (AFM) nano-oxidation process. Clear single-electron charging effects such as Coulomb gap, Coulomb staircase and Coulomb oscillation characteristics were observed at about 100 K.

Keywords

atomic force microscopy; cryogenic electronics; electron beam lithography; nanotechnology; niobium; niobium compounds; oxidation; single electron transistors; tunnel diodes; tunnel transistors; 100 K; Coulomb gap; Coulomb oscillation characteristics; Coulomb staircase; Nb-NbO; atomic force microscope; double junctions; nanooxidation process; side gate structure; single electron transistors; single-electron charging effects; triple junctions; tunnel diodes; ultra-small tunnel junction devices; Atomic force microscopy; Current measurement; Diodes; Electron microscopy; High temperature superconductors; Nanoscale devices; Niobium; Single electron transistors; Temperature dependence; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1996. Digest. 54th Annual

Conference_Location

Santa Barbara, CA, USA

Print_ISBN

0-7803-3358-6

Type

conf

DOI

10.1109/DRC.1996.546429

Filename

546429