DocumentCode
2358383
Title
Improvement of metal-semiconductor-metal GaN ultraviolet detectors
Author
Huang, Z.C. ; Mott, D.B. ; Shu, P.K.
Author_Institution
NASA Goddard Space Flight Center, Greenbelt, MD, USA
fYear
1996
fDate
26-26 June 1996
Firstpage
188
Lastpage
189
Abstract
Summary form only given. We have carried out a systematic study on the performance of the photoconductors made from GaN grown by metal organic chemical vapor deposition (MOCVD) using different growth conditions, and have found that both response time and responsivity of the GaN detector are improved when the material is grown using increased ammonia flow rates. We attribute this improvement to the reduction of the point defects in GaN.
Keywords
III-V semiconductors; chemical vapour deposition; gallium compounds; metal-semiconductor-metal structures; photodetectors; point defects; semiconductor growth; ultraviolet detectors; GaN; III-V semiconductors; ammonia flow rates; growth conditions; metal organic chemical vapor deposition; metal-semiconductor-metal devices; photoconductors; point defect reduction; response time; responsivity; ultraviolet detectors; Conducting materials; Delay; Detectors; Fluid flow measurement; Gallium nitride; MOCVD; NASA; Nitrogen; Photoconducting materials; Photoconductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1996. Digest. 54th Annual
Conference_Location
Santa Barbara, CA, USA
Print_ISBN
0-7803-3358-6
Type
conf
DOI
10.1109/DRC.1996.546430
Filename
546430
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