81 GHz gain-bandwidth product silicon hetero-interface photodetector

Summary form only given. We have fabricated and tested avalanche photodetectors operating in the wavelength range between 1.O and 1.65 /spl mu/m that use separate InGaAs absorption and Si multiplication regions bonded through wafer fusion. Directly integrating InGaAs and Si layers in an avalanche photodetector combines the infrared absorption capabilities of InGaAs and the avalanche multiplication properties of Si. The large ratio of electron and hole ionization coefficients of Si should result in a much lower noise and ten times higher gain-bandwidth products for these detectors than for comparable avalanche photodetectors (APDs) using III-V semiconductors in multiplication regions. Silicon Hetero-Interface Photo (SHIP) detectors were recently reported and the device reported here has a much improved design resulting in ten times higher gain. The first dynamic measurements are also reported here, with a high gain-bandwidth product of 81 GHz.