Title :
The observation of mobile ion of 40nm node by Triangular Voltage Sweep
Author :
Huang, Chao ; Liang, James W. ; Juan, Alfons ; Su, K.C.
Author_Institution :
Reliability Technol. & Assurance Div., UMC Inc., Hsinchu, Taiwan
fDate :
June 30 2014-July 4 2014
Abstract :
Using the different test structures, we investigated the Triangular Voltage Sweep (TVS) variables, e.g. temperature, capacitor area & voltage sweep rate to observe the mobile ion in dielectric layer for Back-end process. We found that temperature 125°C could activate mobile ions. The amount of mobile ion is strongly correlated with tested topology. The amount of mobile ion is also dependent on the voltage sweep rate. Time-dependent dielectric breakdown (TDDB) lifetime will reduce 1 order when mobile ion concentration raise 1 order. It is extremely important to specify the reasonable dielectric area of test structure (intra-metal comb length) for both of TDDB and TVS.
Keywords :
electric breakdown; integrated circuit reliability; back end process; dielectric layer; mobile ion; time dependent dielectric breakdown lifetime; triangular voltage sweep; voltage sweep rate; Decision support systems; Failure analysis; Integrated circuits; Bias temperature stress; Time-dependent dielectric breakdown; Triangular Voltage Sweep; capacitor area; comb structure; cupper; intra-metal; mobile ion; temperature; voltage breakdown; voltage sweep rate;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2014 IEEE 21st International Symposium on the
Conference_Location :
Marina Bay Sands
Print_ISBN :
978-1-4799-3931-2
DOI :
10.1109/IPFA.2014.6898164
