Title :
In-depth description for the FA case with Gate-to-Source or Drain short by nanoprobing analysis
Author :
Li Lung Lai ; Zhang, Oscar ; Ling Zhu ; Feng Qian ; Sun, M.
fDate :
June 30 2014-July 4 2014
Abstract :
Nanoprobing analysis has become standard analytical technique in the modern semiconductor FA lab. In this paper, we describe the use of nanoprobing to investigate cases of Gate-to-Source or Gate-to-Drain shorts and follow up the data generated by nanoprobing with physical analysis. The paper provide discussion of the electrical details and the physical mechanisms.
Keywords :
failure analysis; probes; semiconductor devices; FA case; electrical details; failure analysis; gate-to-drain shorts; gate-to-source shorts; in-depth description; modern semiconductor FA lab; nanoprobing analysis; physical analysis; physical mechanisms; standard analytical technique; Failure analysis; Integrated circuit modeling; Layout; Leakage currents; Logic gates; Stress;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2014 IEEE 21st International Symposium on the
Conference_Location :
Marina Bay Sands
Print_ISBN :
978-1-4799-3931-2
DOI :
10.1109/IPFA.2014.6898166
