DocumentCode
235849
Title
In-depth description for the FA case with Gate-to-Source or Drain short by nanoprobing analysis
Author
Li Lung Lai ; Zhang, Oscar ; Ling Zhu ; Feng Qian ; Sun, M.
fYear
2014
fDate
June 30 2014-July 4 2014
Firstpage
156
Lastpage
159
Abstract
Nanoprobing analysis has become standard analytical technique in the modern semiconductor FA lab. In this paper, we describe the use of nanoprobing to investigate cases of Gate-to-Source or Gate-to-Drain shorts and follow up the data generated by nanoprobing with physical analysis. The paper provide discussion of the electrical details and the physical mechanisms.
Keywords
failure analysis; probes; semiconductor devices; FA case; electrical details; failure analysis; gate-to-drain shorts; gate-to-source shorts; in-depth description; modern semiconductor FA lab; nanoprobing analysis; physical analysis; physical mechanisms; standard analytical technique; Failure analysis; Integrated circuit modeling; Layout; Leakage currents; Logic gates; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2014 IEEE 21st International Symposium on the
Conference_Location
Marina Bay Sands
ISSN
1946-1542
Print_ISBN
978-1-4799-3931-2
Type
conf
DOI
10.1109/IPFA.2014.6898166
Filename
6898166
Link To Document