Analysis of the dynamic characteristics of a power semiconductor module, considering the influence of electromagnetic coupling between wiring

Author

Usui, Osamu ; Nakatake, Hiroshi ; Ohi, Takeshi

Author_Institution

Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Hyogo

fYear

2005

fDate

11-14 Sept. 2005

Abstract

The dynamic characteristics of power semiconductor modules were investigated. The switching behavior of power modules is strongly influenced by electromagnetic coupling. Therefore to design highly reliable power modules, it is important to establish a method of analyzing their dynamic characteristics which considers these electromagnetic phenomena. The parasitic parameters of wiring in a power semiconductor module were determined using three-dimensional electromagnetic field analysis and their dynamic characteristics were analyzed using these parameters. The analysis results showed good agreement with the experimental results

Keywords

electromagnetic coupling; power semiconductor switches; wiring; electromagnetic coupling; power semiconductor module dynamic characteristics; switching behavior; three-dimensional electromagnetic field analysis; wiring parasitic parameters; Circuits; Electromagnetic analysis; Electromagnetic coupling; Electromagnetic fields; Insulated gate bipolar transistors; Multichip modules; Power semiconductor switches; Semiconductor diodes; Voltage; Wiring; Electromagnetic Coupling; Electromagnetic Field Analysis; Parasitic Parameter; Power Semiconductor Module;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications, 2005 European Conference on

Conference_Location

Dresden

Print_ISBN

90-75815-09-3

Type

conf

DOI

10.1109/EPE.2005.219404

Filename

1665594