DocumentCode
235851
Title
Microstructural approach to failure analysis of thin film transistors
Author
Ju Ho Lee ; SungSoon Choi ; Kwan Hun Lee
Author_Institution
Reliability Technol. Res. Center, Korea Electron. Technol. Inst. (KETI), Seongnam, South Korea
fYear
2014
fDate
June 30 2014-July 4 2014
Firstpage
87
Lastpage
89
Abstract
As size of electronic device miniaturized, microstructural characteristics of materials significantly affect the electrical properties of devices. In this study, microstructural approach to failure analysis of thin film transistors is presented using two examples. Also, we directly demonstrated correlation between electrical properties and microstructural characteristics using transmission electron microscopy.
Keywords
failure analysis; thin film transistors; transmission electron microscopy; electrical properties; failure analysis; microstructural approach; thin film transistors; transmission electron microscopy; Aluminum oxide; Failure analysis; Films; Substrates; Thin film transistors; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2014 IEEE 21st International Symposium on the
Conference_Location
Marina Bay Sands
ISSN
1946-1542
Print_ISBN
978-1-4799-3931-2
Type
conf
DOI
10.1109/IPFA.2014.6898168
Filename
6898168
Link To Document