• DocumentCode
    2358517
  • Title

    A sub-CV2 pad driver with 10 ns transition time

  • Author

    Svensson, L.J. ; Athas, W.C. ; Wen, R.S.-C.

  • Author_Institution
    Inf. Sci. Inst., Univ. of Southern California, Marina del Rey, CA, USA
  • fYear
    1996
  • fDate
    12-14 Aug 1996
  • Firstpage
    105
  • Lastpage
    108
  • Abstract
    We describe an application of stepwise charging for driving off-chip signals. Our driver, designed for a chip built in a 0.8 μm bulk CMOS process, dissipates significantly less than CV2 per cycle while driving a 100 pF load to a 5 V swing with transition times as low as 10 ns. The transition time is adjustable; dissipation measured on a test chip ranges from 53% of CV2 at 16 ns to 70% at 10 ns. The target chip is approximately 6% larger with our driver than with a conventional one
  • Keywords
    CMOS integrated circuits; driver circuits; 0.8 micron; 10 ns; 100 pF; 5 V; bulk CMOS process; low-power pad driver; off-chip signal; stepwise charging; sub-CV2 power dissipation; transition time; Atherosclerosis; Capacitance; Capacitors; Circuits; Drives; Equations; Inverters; Pulse generation; Switches; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Low Power Electronics and Design, 1996., International Symposium on
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    0-7803-3571-6
  • Type

    conf

  • DOI
    10.1109/LPE.1996.546439
  • Filename
    546439
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2358517