Title :
A case study on the defective contact with Schottky junction character
Author :
JingLong Li ; ChangYan Qi ; Yi Che ; Quande Zhang ; Ma, Hui ; Liu, Jiangchuan ; Masuda, Masahiro ; Binhai Liu
Author_Institution :
Freescale Semicond. (China)Ltd., Tianjin, China
fDate :
June 30 2014-July 4 2014
Abstract :
Ohmic contacts must be made in any semiconductor device or integrated circuits(IC). Contact failures usually are related to high resistance or open. However, sometimes the defective contact may be Schottky character instead of ohmic contact. In this paper, a case study on such a contact failure is discussed.
Keywords :
Schottky barriers; contact resistance; failure analysis; integrated circuits; ohmic contacts; semiconductor devices; IC; contact failures; defective contact; high resistance; integrated circuits; ohmic contacts; open resistance; schottky junction character; semiconductor device; Contacts; Failure analysis; Immune system; Implants; Junctions; Layout; Metals;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2014 IEEE 21st International Symposium on the
Conference_Location :
Marina Bay Sands
Print_ISBN :
978-1-4799-3931-2
DOI :
10.1109/IPFA.2014.6898169
