• DocumentCode
    235852
  • Title

    A case study on the defective contact with Schottky junction character

  • Author

    JingLong Li ; ChangYan Qi ; Yi Che ; Quande Zhang ; Ma, Hui ; Liu, Jiangchuan ; Masuda, Masahiro ; Binhai Liu

  • Author_Institution
    Freescale Semicond. (China)Ltd., Tianjin, China
  • fYear
    2014
  • fDate
    June 30 2014-July 4 2014
  • Firstpage
    66
  • Lastpage
    69
  • Abstract
    Ohmic contacts must be made in any semiconductor device or integrated circuits(IC). Contact failures usually are related to high resistance or open. However, sometimes the defective contact may be Schottky character instead of ohmic contact. In this paper, a case study on such a contact failure is discussed.
  • Keywords
    Schottky barriers; contact resistance; failure analysis; integrated circuits; ohmic contacts; semiconductor devices; IC; contact failures; defective contact; high resistance; integrated circuits; ohmic contacts; open resistance; schottky junction character; semiconductor device; Contacts; Failure analysis; Immune system; Implants; Junctions; Layout; Metals;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2014 IEEE 21st International Symposium on the
  • Conference_Location
    Marina Bay Sands
  • ISSN
    1946-1542
  • Print_ISBN
    978-1-4799-3931-2
  • Type

    conf

  • DOI
    10.1109/IPFA.2014.6898169
  • Filename
    6898169
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=235852