Title :
Direct observation of fluctuations in both the number and individual carrier capture rate of interface traps in small gate-area MOSFETs
Author :
Tsuchiya, Toshiaki ; Mori, Yuki ; Morimura, Yuta ; Mogami, Tohru ; Ohji, Yuzuru
Author_Institution :
Interdiscipl. Fac. of Sci. & Eng., Shimane Univ., Matsue, Japan
Abstract :
Fluctuations in not only the number but also the individual carrier capture rate of interface traps in small gate-area MOSFETs containing only less than several interface traps have been investigated from an understanding of newly observed transient charge pumping characteristics. These fluctuations can indicate the possible impact on the fluctuations in threshold voltage of future digital MIS devices.
Keywords :
MOSFET; fluctuations; interface states; transients; carrier capture rate fluctuations; digital MIS devices; interface trap number fluctuation; small gate-area MOSFET; threshold voltage; transient charge pumping characteristics; Charge carrier processes; Charge pumps; Electron traps; Fluctuations; Lead compounds; MIS devices; MOSFETs; Pulse measurements; Telegraphy; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European
Conference_Location :
Athens
Print_ISBN :
978-1-4244-4351-2
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2009.5331364
