DocumentCode
2358862
Title
Electro-thermal investigations on silicon inverters operating at low frequency
Author
Antonios, J. ; Ginot, N. ; Batard, C. ; Scudeller, Y. ; Machmoum, M.
Author_Institution
2LGMPA, Univ. de Nantes, Nantes, France
fYear
2010
fDate
26-28 April 2010
Firstpage
1
Lastpage
5
Abstract
This paper presents methods for determining power loss profiles of Si-IGBT-based inverters and the induced junction temperature. Power losses were decomposed into different waveforms in order to investigate their influence on the junction temperature of the IGBT. Junction temperature has been determined by a dynamic thermal model using the transmission matrix technique.
Keywords
insulated gate bipolar transistors; invertors; silicon; thermal management (packaging); Si; dynamic thermal model; electrothermal management; induced junction temperature; insulated gate bipolar transistors; power loss profiles; silicon inverters; transmission matrix technique; Automotive electronics; Consumer electronics; Degradation; Driver circuits; Electronic equipment testing; Frequency; Inverters; Life testing; Photovoltaic cells; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE), 2010 11th International Conference on
Conference_Location
Bordeaux
Print_ISBN
978-1-4244-7026-6
Type
conf
DOI
10.1109/ESIME.2010.5464511
Filename
5464511
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