DocumentCode :
2358899
Title :
Multiphysics modeling and design of ultralarge multiwafer MOVPE reactor for group III-nitride light emitting diodes
Author :
Kim, Changsung Sean ; Hong, Jongpa ; Shim, Jihye ; Won, Yongsun ; Kwon, Yong-Il
Author_Institution :
Corp. R&D Inst., Samsung Electro-Mech. Co., Ltd., Suwon, South Korea
fYear :
2010
fDate :
26-28 April 2010
Firstpage :
1
Lastpage :
7
Abstract :
A multiphysics modeling and design has been performed for the world´s largest Metal Organic Vapor Phase Epitaxy (MOVPE) reactor by combining Theory of Inventive Problem Solving (TRIZ) for concept design, Design for Six Sigma (DFSS) for shape optimization, and Computer-Aided Engineering (CAE) simulations of multi-scale from atomic to macro scales. Numerical simulations considering gas phase chemical reactions and surface chemistry have been thoroughly verified by comparing with experimental measurements from various MOVPE reactors. As a preliminary study, two transparent mock-up models for the ultra-large MOVPE reactor were made in real scale and their internal flow fields were measured by laser Doppler velocimetry (LDV). A RF induction heater was also simulated by coupling the thermo-fluid field and electro-magnetic field together. Since the MOVPE reactor was manufactured, numerous tests for high-temperature reliability and temperature uniformity have repeatedly been conducted. Consequently, these multidisciplinary approaches have been successfully applied to develop the ultralarge MOVPE reactor for group III-nitride light emitting diode (LED).
Keywords :
Doppler measurement; III-V semiconductors; MOCVD; induction heating; laser velocimetry; light emitting diodes; numerical analysis; optimisation; reliability; vapour phase epitaxial growth; RF induction heater; computer-aided engineering simulations; electromagnetic field; gas phase chemical reactions; group III-nitride light emitting diodes; inventive problem solving; laser Doppler velocimetry; metal organic vapor phase epitaxy; multiphysics modeling; numerical simulations; reliability; shape optimization; six sigma; surface chemistry; temperature uniformity; thermo-fluid field; ultralarge multiwafer MOVPE reactor; Design engineering; Design optimization; Epitaxial growth; Epitaxial layers; Inductors; Light emitting diodes; Problem-solving; Semiconductor process modeling; Shape; Six sigma;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE), 2010 11th International Conference on
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4244-7026-6
Type :
conf
DOI :
10.1109/ESIME.2010.5464513
Filename :
5464513
Link To Document :
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