Title :
Polarization-related properties of vertical-cavity surface-emitting lasers
Author :
Kuksenkov, D.V. ; Temkin, H.
Author_Institution :
Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA
Abstract :
Internal quantum efficiency, internal loss, and gain dependence on the drive current are measured independently for the two polarization eigenstates of GaAs-AlGaAs 850 nm proton implanted vertical-cavity surface-emitting lasers (VCSELs). Conditions needed to assure complete polarization stability of VCSELs are determined.
Keywords :
III-V semiconductors; aluminium compounds; eigenvalues and eigenfunctions; gallium arsenide; infrared sources; laser cavity resonators; laser stability; laser transitions; light polarisation; optical losses; semiconductor lasers; surface emitting lasers; 850 nm; GaAs-AlGaAs; GaAs-AlGaAs 850 nm proton implanted vertical-cavity surface-emitting lasers; VCSELs; complete polarization stability; drive current; gain dependence; internal loss; internal quantum efficiency; laser stability; polarization eigenstates; polarization-related properties; vertical-cavity surface-emitting lasers; Bit error rate; Laser modes; Laser noise; Loss measurement; Optical fiber communication; Optical polarization; Power measurement; Stability; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
DOI :
10.1109/ISLC.1996.558848
