Title :
Investigation of SiGe HBT potentialities under cryogenic temperature
Author :
Waldhoff, Nicolas ; Danneville, François ; Dambrine, Gilles ; Geynet, Boris ; Chevalier, Pascal
Author_Institution :
Inst. d´´Electron., de Microelectron. et de Nanotechnol. (IEMN), Villeneuve-d´´Ascq, France
Abstract :
This paper focuses on small signal and noise performances of Si/SiGe:C heterojunction bipolar transistors (HBT) under cryogenic temperatures. Two different technologies featuring state-of-the-art cutoff frequencies respectively for fT and fMAX are investigated. State-of-the-art minimum noise figures are reported both at room and cryogenic temperatures. A T small signal equivalent model to which is added a noise model has been extracted and is used to discuss the improvement of HBT performances at cryogenic temperatures.
Keywords :
Ge-Si alloys; carbon; cryogenic electronics; elemental semiconductors; equivalent circuits; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor device models; semiconductor device noise; silicon; BiCMOS HBT; Si-SiGe:C; SiGe HBT; cryogenic temperature; heterojunction bipolar transistor; noise figures; noise model; small signal equivalent model; state-of-the-art cutoff frequencies; temperature 293 K to 298 K; Circuit noise; Cryogenics; Cutoff frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Low-noise amplifiers; Performance evaluation; Silicon germanium; Space technology; Temperature;
Conference_Titel :
Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European
Conference_Location :
Athens
Print_ISBN :
978-1-4244-4351-2
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2009.5331374
