DocumentCode :
2359315
Title :
Evolution and outlook of TSV and 3D IC/Si integration
Author :
Lau, John H.
Author_Institution :
Electron. & Optoelectron. Labs., Ind. Technol. Res. Inst. (ITRI), Hsinchu, Taiwan
fYear :
2010
fDate :
8-10 Dec. 2010
Firstpage :
560
Lastpage :
570
Abstract :
3D integration consists of 3D IC packaging, 3D IC integration, and 3D Si integration. They are different and in general the TSV (through-silicon via) separates 3D IC packaging from 3D IC integration and 3D Si integration since the latter two use TSV but 3D IC packaging does not. TSV (with a new concept that every chip or interposer could have two surfaces with circuits) is the heart of 3D Si integration and 3D IC integration and is the focus of this investigation. The origin of 3D Si integration and 3D IC integration is presented. Furthermore, the evolution and outlook of 3D Si integration and 3D IC integration are discussed as well as their road maps are presented. Finally, a generic, low-cost and thermal-enhanced 3D IC integration system-in-package (SiP) is proposed for high performance applications.
Keywords :
elemental semiconductors; integrated circuit packaging; silicon; system-in-package; three-dimensional integrated circuits; 3D IC packaging; Si; TSV; system-in-package; thermal-enhanced 3D IC integration; through-silicon via;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Packaging Technology Conference (EPTC), 2010 12th
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-8560-4
Electronic_ISBN :
978-1-4244-8561-1
Type :
conf
DOI :
10.1109/EPTC.2010.5702702
Filename :
5702702
Link To Document :
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