• DocumentCode
    2359315
  • Title

    Evolution and outlook of TSV and 3D IC/Si integration

  • Author

    Lau, John H.

  • Author_Institution
    Electron. & Optoelectron. Labs., Ind. Technol. Res. Inst. (ITRI), Hsinchu, Taiwan
  • fYear
    2010
  • fDate
    8-10 Dec. 2010
  • Firstpage
    560
  • Lastpage
    570
  • Abstract
    3D integration consists of 3D IC packaging, 3D IC integration, and 3D Si integration. They are different and in general the TSV (through-silicon via) separates 3D IC packaging from 3D IC integration and 3D Si integration since the latter two use TSV but 3D IC packaging does not. TSV (with a new concept that every chip or interposer could have two surfaces with circuits) is the heart of 3D Si integration and 3D IC integration and is the focus of this investigation. The origin of 3D Si integration and 3D IC integration is presented. Furthermore, the evolution and outlook of 3D Si integration and 3D IC integration are discussed as well as their road maps are presented. Finally, a generic, low-cost and thermal-enhanced 3D IC integration system-in-package (SiP) is proposed for high performance applications.
  • Keywords
    elemental semiconductors; integrated circuit packaging; silicon; system-in-package; three-dimensional integrated circuits; 3D IC packaging; Si; TSV; system-in-package; thermal-enhanced 3D IC integration; through-silicon via;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Packaging Technology Conference (EPTC), 2010 12th
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4244-8560-4
  • Electronic_ISBN
    978-1-4244-8561-1
  • Type

    conf

  • DOI
    10.1109/EPTC.2010.5702702
  • Filename
    5702702