Title :
Oxide Soft BreakDown : From device modeling to small circuit simulation
Author :
Gerrer, L. ; Ghibaudo, G. ; Ribes, G.
Author_Institution :
IMEP-LAHC, Minatec-INPG, Grenoble, France
Abstract :
After several experiments of the impact of Soft- Breakdown on MOS device´s operation and parameters, we use the current partitioning equations to express the channel debiasing and compare its influence to the leakage current. A 3D TCAD model is set up and directly used in small circuit´s mixed mode simulations to evaluate the SBD impact on inverters and SRAM processes. Finally an analytical model of the degradation effects is proposed, to be integrated to compact models.
Keywords :
MOS integrated circuits; circuit simulation; integrated circuit modelling; MOS device operation; SRAM process; channel debiasing; current partitioning equations; degradation effects; device modeling; inverter process; leakage current; oxide soft breakdown; small circuit mixed mode simulations; small circuit simulation; Analytical models; Breakdown voltage; Circuit simulation; Electric breakdown; Gate leakage; Inverters; Leakage current; Random access memory; Stress; Thickness measurement;
Conference_Titel :
Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European
Conference_Location :
Athens
Print_ISBN :
978-1-4244-4351-2
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2009.5331399
