Exemplified calculation of stress migration in a 90nm node via structure

Author

Weide-Zaage, Kirsten

Author_Institution

Inf. Technol. Lab., Leibniz Univ. Hannover, Hannover, Germany

fYear

2010

fDate

26-28 April 2010

Firstpage

1

Lastpage

8

Abstract

An exemplified calculation of migration effects especially stress migration was carried out for a via structure of 90 nm node dimensions with narrow and wide lines. The process-induced stress was considered in the simulations. For the first time the mass flux divergence was determined using an user routine which allows the direct calculation of the divgrad(x) terms in the mass flux divergence equation. The investigated cases show a very good correlation between simulation and measurements from literature for the separated calculations of the migration effects. Calculations with a reference temperature of the stress free state are found not to be sufficient for the calculation of the stress distribution as well as mass flux divergence distribution.

Keywords

electromigration; nanoelectronics; mass flux divergence equation; migration effects; process-induced stress; size 90 nm; stress free state; stress migration; Atomic measurements; Carbon nanotubes; Composite materials; Conducting materials; Electronic packaging thermal management; Kinetic energy; Semiconductor materials; Stress; Temperature; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE), 2010 11th International Conference on

Conference_Location

Bordeaux

Print_ISBN

978-1-4244-7026-6

Type

conf

DOI

10.1109/ESIME.2010.5464542

Filename

5464542