RF performance degradation in 100-nm metal gate/high-k dielectric nMOSFET by hot carrier effects

Author

Sagong, Hyun Chul ; Lee, Kyong Taek ; Kang, Chang Yong ; Choi, Gil-Bok ; Choi, Hyun-Sik ; Baek, Rock-Hyun ; Park, Min-Sang ; Jung, Sung-Woo ; Jeong, Yoon-Ha

Author_Institution

Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea

fYear

2009

fDate

14-18 Sept. 2009

Firstpage

265

Lastpage

268

Abstract

RF performances of 100-nm metal gate/high-k dielectric nMOSFET and parameters degradation by hot carrier injection to apply to RF integrated circuits are investigated. The attained nMOSFETs RF performances are 132-GHz f_T and 44-GHz f_max. In addition to RF figures of merit (FOM, f_T and f_max), variation of capacitance and resistance is monitored to study hot carrier effects.

Keywords

MOSFET; high-k dielectric thin films; hot carriers; microwave field effect transistors; RF integrated circuits; RF performance degradation; capacitance; current gain cutoff frequency; figures of merit; hot carrier effects; hot carrier injection; maximum oscillation frequency; metal gate-high-k dielectric nMOSFET; resistance; size 100 nm; Degradation; High-K gate dielectrics; Hot carrier effects; Hot carrier injection; Hot carriers; Integrated circuit measurements; MOSFET circuits; Radio frequency; Radiofrequency integrated circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European

Conference_Location

Athens

ISSN

1930-8876

Print_ISBN

978-1-4244-4351-2

Electronic_ISBN

1930-8876

Type

conf

DOI

10.1109/ESSDERC.2009.5331402

Filename

5331402