Title :
Breakdown of the quantum Hall effect in epitaxial graphene
Author :
Janssen, T.J.B.M. ; Rozhko, S. ; Tzalenchuk, A. ; Alexander-Webber, J.A. ; Nicholas, R.J.
Author_Institution :
Nat. Phys. Lab., Teddington, UK
Abstract :
We present the phase space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic field. At 2 K, breakdown currents (Ic) almost 2 orders of magnitude greater than in GaAs devices are observed. We use this knowledge to explore the potential of using graphene as a high temperature (> 2 K) and low magnetic field (<; 5 T) quantum resistance standard.
Keywords :
Hall effect devices; carrier density; current density; electric breakdown; graphene; magnetic fields; polymers; quantum Hall effect; silicon compounds; wide band gap semiconductors; SiC-C; carrier density; current density; magnetic field; phase space; polymer gated epitaxial graphene; quantum Hall effect breakdown; quantum resistance standard; Current measurement; Electric breakdown; Electrical resistance measurement; Graphene; Hall effect; Resistance; Silicon carbide; Graphene; measurement standards; quantum Hall effect; quantum resistance standard;
Conference_Titel :
Precision Electromagnetic Measurements (CPEM 2014), 2014 Conference on
Conference_Location :
Rio de Janeiro
Print_ISBN :
978-1-4799-5205-2
DOI :
10.1109/CPEM.2014.6898248
