A simple, low cost gate drive method for practical use of SiC JFETs in SMPS

Author

Hofsajer, I.W. ; Melkonyan, A. ; Mantel, M. ; Round, S. ; Kolar, J.W.

Author_Institution

Technol. Res. Group, Johannesburg Univ.

fYear

2005

fDate

11-14 Sept. 2005

Abstract

The silicon carbide JFET has many promising advantages over silicon. However it requires a more complicated gate drive than conventional MOSFETs. In this paper a simple and effective method of driving the new devices with existing monolithic gate drive circuits is proposed. The basis of the proposed method lies in applying a constant negative DC bias to the gate in order to minimize the required voltage swing on the gate to enable switching to take place. The method is supported with experimental data and proves to be effective. The negative gate bias does however lead to additional losses and derating of the device is required. The derating data for a constant power loss is given as well

Keywords

driver circuits; junction gate field effect transistors; monolithic integrated circuits; silicon compounds; switched mode power supplies; wide band gap semiconductors; JFET; MOSFET; SMPS; SiC; gate drive method; monolithic gate drive circuits; negative gate bias; power loss; voltage swing; Breakdown voltage; Costs; Driver circuits; Electronics industry; JFETs; MOSFETs; Silicon carbide; Switched-mode power supply; Switches; Temperature; JFET; Silicon Carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications, 2005 European Conference on

Conference_Location

Dresden

Print_ISBN

90-75815-09-3

Type

conf

DOI

10.1109/EPE.2005.219476

Filename

1665666