A new approach for the electrothermal modeling of the power bipolar transistor

Author

Maurel, T. ; Bouchakour, R. ; Lallement, C.

Author_Institution

Dept. Electronique, Ecole Nat. Superieure des Telecommun., Paris, France

Volume

2

fYear

1995

fDate

18-22 Jun 1995

Firstpage

858

Abstract

We have developed an electrothermal model for the bipolar power transistor, implemented in the Saber simulator, in which the device´s temperature becomes an interactive variable during the simulation. Two approaches for the electrothermal coupling are compared and discussed. The accuracy of the model is appreciated with the electrical and thermal characterization of a NPνN power bipolar transistor using the Iccap-Saber interface

Keywords

digital simulation; power bipolar transistors; power engineering computing; semiconductor device models; simulation; thermal analysis; Iccap-Saber interface; NPνN power bipolar transistor; Saber simulator; device temperature; electrical characterization; electrothermal coupling; electrothermal modeling; interactive variable; power bipolar transistor; simulation; thermal characterization; transistor characterisation; Bipolar transistors; Charge carrier processes; Circuit simulation; Current density; Electrothermal effects; Epitaxial layers; Equations; Neodymium; Semiconductor process modeling; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 1995. PESC '95 Record., 26th Annual IEEE

Conference_Location

Atlanta, GA

Print_ISBN

0-7803-2730-6

Type

conf

DOI

10.1109/PESC.1995.474917

Filename

474917