Title :
High total dose response of the UTMC gate array fabricated at Lockheed Martin Federal Systems
Author :
Benedetto, J.M. ; Bishop, A. ; Martin, M. ; Haddad, N.
Author_Institution :
UTMC Microelectron. Syst., Colorado Springs, CO, USA
Abstract :
The radiation response of the UTMC Microelectronic Systems (UTMC) FA01 gate array standard evaluation circuit (SEC) was measured up to a total ionizing dose of 10 Mrad(Si) using a Co-60 source. Each SEC consists of 9 functional blocks, all of which remained fully functional throughout the accumulation of total dose. In addition to functional testing, the SEC was monitored for parameter shifts in quiescent current (QIDD), propagation delays, input buffer data transition voltage, and output buffer drive voltage. All parameters were within specified values during the tests
Keywords :
CMOS logic circuits; delays; integrated circuit reliability; integrated circuit testing; logic arrays; logic testing; radiation hardening (electronics); 0.8 micron; 10 Mrad; Co-60 source; FA01 gate array standard evaluation circuit; Lockheed Martin Federal Systems; QIDD monitoring; UTMC Microelectronic Systems; UTMC gate array; functional testing; high total dose response; input buffer data transition voltage; output buffer drive voltage; parameter shifts; propagation delays; quiescent current monitoring; radiation response; Application specific integrated circuits; CMOS process; CMOS technology; Ionizing radiation; Microelectronics; Propagation delay; Radiation hardening; Temperature; Testing; Voltage;
Conference_Titel :
Radiation Effects Data Workshop, 1998. IEEE
Conference_Location :
Newport Beach, CA
Print_ISBN :
0-7803-5109-6
DOI :
10.1109/REDW.1998.731483
