Title :
Total ionizing dose effects on flash memories
Author :
Nguyen, D.N. ; Lee, C.I. ; Johnston, A.H.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
This paper presents the results of measurements performed on two different flash memory types, NOR and NAND technologies. The data suggest that the degradation is influenced by the activation of integrated charge pump circuits. The NAND type device functionally failed at lower TID level than the NOR technology, even when the NOR device was used with the charge pump activated
Keywords :
NAND circuits; NOR circuits; failure analysis; flash memories; integrated circuit reliability; integrated circuit testing; integrated memory circuits; leakage currents; radiation effects; NAND technology; NOR technology; TID level; charge pump circuit activation; flash memories; functional failure; integrated charge pump circuits; performance degradation; total ionizing dose effects; Charge pumps; Degradation; Flash memory; Integrated circuit technology; Laboratories; Nonvolatile memory; Propulsion; Space technology; Tunneling; Voltage;
Conference_Titel :
Radiation Effects Data Workshop, 1998. IEEE
Conference_Location :
Newport Beach, CA
Print_ISBN :
0-7803-5109-6
DOI :
10.1109/REDW.1998.731486
