Title :
Dose rate and total dose dependence of the 1/f noise performance of an operational amplifier fabricated on a complimentary bipolar process on bonded wafer
Author :
Hiemstra, David M.
Author_Institution :
SPAR Space Syst., Brampton, Ont., Canada
Abstract :
Dose rate and total dose dependence of the 1/f noise performance of an operational amplifier fabricated on a complimentary bipolar process on bonded wafer are presented. Possible noise performance degradation mechanisms are described
Keywords :
1/f noise; annealing; bipolar analogue integrated circuits; integrated circuit noise; integrated circuit testing; operational amplifiers; radiation effects; silicon-on-insulator; wafer bonding; 1/f noise performance; Si; bipolar SOI technology; bipolar op amp; bonded wafer; complimentary bipolar process; dose rate dependence; noise performance degradation mechanisms; operational amplifier; total dose dependence; Annealing; Degradation; Distortion measurement; Low-frequency noise; Operational amplifiers; Silicon on insulator technology; Testing; Total harmonic distortion; Voltage; Wafer bonding;
Conference_Titel :
Radiation Effects Data Workshop, 1998. IEEE
Conference_Location :
Newport Beach, CA
Print_ISBN :
0-7803-5109-6
DOI :
10.1109/REDW.1998.731488
