A behavioral model of the IGBT for circuit simulation

The configuration of the Hammerstein model, which includes a nonlinear static block followed by a linear dynamic block, is applied to model the dynamics of the insulated gate bipolar transistor (IGBT). Using least-squares methods, the parameters in the proposed behavioral model can be extracted from the electrical measurements of physical devices or from the circuit simulations of physics-based models. In this work, a physics-based IGBT model is used for extracting the model parameters and for comparison. This Hammerstein-like model structure of the behavioral model gives satisfactory simulation results for various test circuits in terms of efficiency and accuracy