DocumentCode
2360230
Title
Nanoscale Data Storage Devices Capacity and Encoding Schemes
Author
Sotiriadis, Paul P.
Author_Institution
Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD
fYear
2006
fDate
Sept. 2006
Firstpage
1
Lastpage
4
Abstract
Crossbar switching networks formed by nanowire arrays and ohmic switches are promising future data storage devices. This paper presents the information capacity limits of these devices as well as simple encoding schemes that can be used to store and recover the data. It is shown that for large array sizes N,M, capacity asymptotically approaches (N+ M)log2(N + M) bits. The proposed encoding scheme allows for using N log2(M) bits (NlesM) using low complexity combinatorial circuitry
Keywords
combinational circuits; digital storage; encoding; memory architecture; nanoelectronics; nanowires; switching networks; combinatorial circuits; crossbar switching networks; nanoscale data storage devices; nanowire arrays; ohmic switches; Electrical resistance measurement; Encoding; Integrated circuit interconnections; Memory; Nanoscale devices; Nanotechnology; Ohmic contacts; Semiconductor diodes; Switches; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Networks and Workshops, 2006. NanoNet '06. 1st International Conference on
Conference_Location
Lausanne
Print_ISBN
1-4244-0391-X
Type
conf
DOI
10.1109/NANONET.2006.346229
Filename
4152812
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