• DocumentCode
    2360230
  • Title

    Nanoscale Data Storage Devices Capacity and Encoding Schemes

  • Author

    Sotiriadis, Paul P.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD
  • fYear
    2006
  • fDate
    Sept. 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Crossbar switching networks formed by nanowire arrays and ohmic switches are promising future data storage devices. This paper presents the information capacity limits of these devices as well as simple encoding schemes that can be used to store and recover the data. It is shown that for large array sizes N,M, capacity asymptotically approaches (N+ M)log2(N + M) bits. The proposed encoding scheme allows for using N log2(M) bits (NlesM) using low complexity combinatorial circuitry
  • Keywords
    combinational circuits; digital storage; encoding; memory architecture; nanoelectronics; nanowires; switching networks; combinatorial circuits; crossbar switching networks; nanoscale data storage devices; nanowire arrays; ohmic switches; Electrical resistance measurement; Encoding; Integrated circuit interconnections; Memory; Nanoscale devices; Nanotechnology; Ohmic contacts; Semiconductor diodes; Switches; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano-Networks and Workshops, 2006. NanoNet '06. 1st International Conference on
  • Conference_Location
    Lausanne
  • Print_ISBN
    1-4244-0391-X
  • Type

    conf

  • DOI
    10.1109/NANONET.2006.346229
  • Filename
    4152812