DocumentCode :
2360230
Title :
Nanoscale Data Storage Devices Capacity and Encoding Schemes
Author :
Sotiriadis, Paul P.
Author_Institution :
Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD
fYear :
2006
fDate :
Sept. 2006
Firstpage :
1
Lastpage :
4
Abstract :
Crossbar switching networks formed by nanowire arrays and ohmic switches are promising future data storage devices. This paper presents the information capacity limits of these devices as well as simple encoding schemes that can be used to store and recover the data. It is shown that for large array sizes N,M, capacity asymptotically approaches (N+ M)log2(N + M) bits. The proposed encoding scheme allows for using N log2(M) bits (NlesM) using low complexity combinatorial circuitry
Keywords :
combinational circuits; digital storage; encoding; memory architecture; nanoelectronics; nanowires; switching networks; combinatorial circuits; crossbar switching networks; nanoscale data storage devices; nanowire arrays; ohmic switches; Electrical resistance measurement; Encoding; Integrated circuit interconnections; Memory; Nanoscale devices; Nanotechnology; Ohmic contacts; Semiconductor diodes; Switches; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano-Networks and Workshops, 2006. NanoNet '06. 1st International Conference on
Conference_Location :
Lausanne
Print_ISBN :
1-4244-0391-X
Type :
conf
DOI :
10.1109/NANONET.2006.346229
Filename :
4152812
Link To Document :
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