DocumentCode :
2360362
Title :
Neutron single event upsets in SRAM-based FPGAs
Author :
Ohlsson, Mattias ; Dyreklev, Peter ; Johansson, Karin ; Alfke, Peter
Author_Institution :
Div. of Electromagn. Technol., Ericsson Saab Avionics AB, Linkoping, Sweden
fYear :
1998
fDate :
36000
Firstpage :
177
Lastpage :
180
Abstract :
SRAM-based FPGAs have been studied for their sensitivity to atmospheric high energy neutrons. FPGAs with the supply voltage 5 V and 3.3 V were irradiated by 0-11, 14 and 100 MeV neutrons and showed a very low SEU susceptibility
Keywords :
SRAM chips; field programmable gate arrays; neutron effects; 0 to 100 MeV; 3.3 V; 5 V; SRAM-based FPGA; neutron irradiation; single event upset; Aerospace electronics; Field programmable gate arrays; Neutrons; Particle beams; Programmable logic arrays; Random access memory; Single event transient; Single event upset; Testing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop, 1998. IEEE
Conference_Location :
Newport Beach, CA
Print_ISBN :
0-7803-5109-6
Type :
conf
DOI :
10.1109/REDW.1998.731500
Filename :
731500
Link To Document :
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