Title :
A physics-based GTO model for circuit simulation
Author :
Ma, Cliff L. ; Lauritzen, P.O. ; Sigg, J.
Author_Institution :
Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
Abstract :
A systematic modeling approach, the lumped-charge modeling technique, is used to build a compact GTO model for power electronic convertor simulation. The model consists of simplified fundamental semiconductor equations and provides most of the important characteristics of a GTO device under static and dynamic conditions
Keywords :
circuit analysis computing; digital simulation; power engineering computing; semiconductor device models; software packages; thyristor convertors; thyristors; GTO model; Saber; characteristics; circuit simulation; dynamic conditions; lumped-charge modeling technique; power convertor; power electronics; simplified fundamental semiconductor equations; static conditions; systematic modeling approach; Charge carrier processes; Charge carriers; Circuit simulation; P-n junctions; Physics; Poisson equations; Power system modeling; Semiconductor devices; Thyristors; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 1995. PESC '95 Record., 26th Annual IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7803-2730-6
DOI :
10.1109/PESC.1995.474919
