DocumentCode :
2360437
Title :
Light switched Plasma Charging Damage protection device allowing high field characterization
Author :
Sommer, Sebastian P. ; Paschen, Uwe ; Figge, Martin ; Vogt, Holger
Author_Institution :
Fraunhofer Inst. fur Mikroelektron. Schaltungen und Syst., Duisburg, Germany
fYear :
2009
fDate :
14-18 Sept. 2009
Firstpage :
181
Lastpage :
184
Abstract :
One of the main problems in Plasma Charging Damage (PCD) measurement is the need to reference the measured damage to a zero level. Especially when the reference device is small it can not be created damage free without a protective device parallel to the gate. Normally such a device does not allow destructive measurement involving high fields and both polarities. This paper describes a structure, which is capable of protecting a device from PCD, but at the same time allows bipolar high-field diagnostic stress after the end of the process. Its usefulness is demonstrated on a realistic PCD test structure.
Keywords :
MOSFET; plasma diagnostics; radiation protection; semiconductor device measurement; semiconductor device reliability; semiconductor device testing; NMOS transistor; PMOS transistor; bipolar high-field diagnostic stress; bipolar transistor; high field characterization; light switched PCD protection device; plasma charging damage destructive measurement; realistic PCD test structure; Distortion measurement; Fuses; Plasma applications; Plasma devices; Plasma measurements; Plasma temperature; Production; Protection; Stress; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European
Conference_Location :
Athens
ISSN :
1930-8876
Print_ISBN :
978-1-4244-4351-2
Electronic_ISBN :
1930-8876
Type :
conf
DOI :
10.1109/ESSDERC.2009.5331445
Filename :
5331445
Link To Document :
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