Fabrication and characterization of bump-less Cu-Cu bonding by wafer-on-wafer stacking for 3D IC

Author

Peng, L. ; Li, H. Y L ; Lim, D.F. ; Lo, G.Q. ; Kwong, D.L. ; Tan, C.S.

Author_Institution

Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore

fYear

2010

fDate

8-10 Dec. 2010

Firstpage

787

Lastpage

790

Abstract

Three-dimensional integrated circuit (3D IC) technology has become increasingly important due to the demand for high system performance and functionality [1]. Many challenges arise from the third dimension to successfully achieve excellent electrical and mechanical interconnection by wafer bonding approach. In this work, face-to-face (F2F) stacking of wafer-on-wafer (WoW) is successfully demonstrated using bump-less Cu-Cu bonding on 200 mm wafers. Experimental failures are investigated and discussed in details. Optimized bonded Cu structure is found to provide sufficient mechanical strength to sustain shear force during wafer thinning.

Keywords

copper; integrated circuit interconnections; mechanical strength; three-dimensional integrated circuits; wafer bonding; 3D IC; Cu-Cu; bump-less bonding; electrical interconnection; mechanical interconnection; mechanical strength; shear force; size 200 mm; three-dimensional integrated circuit; wafer bonding approach; wafer thinning; wafer-on-wafer stacking;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Packaging Technology Conference (EPTC), 2010 12th

Conference_Location

Singapore

Print_ISBN

978-1-4244-8560-4

Electronic_ISBN

978-1-4244-8561-1

Type

conf

DOI

10.1109/EPTC.2010.5702756

Filename

5702756