Comparison of VLS grown Si NW tunnel FETs with different gate stacks

Author

Moselund, K.E. ; Ghoneim, H. ; Björk, M.T. ; Schmid, H. ; Karg, S. ; Lörtscher, E. ; Riess, W. ; Riel, H.

Author_Institution

IBM Res. GmbH, Zurich Res. Lab., Ruschlikon, Switzerland

fYear

2009

fDate

14-18 Sept. 2009

Firstpage

448

Lastpage

451

Abstract

In the present work we demonstrate the fabrication of tunneling field-effect transistors (TFETs) based on VLS grown silicon nanowires (Si NWs). We have integrated two different gate stacks, a conventional one using SiO₂ and a HfO₂ high-k gate stack. The use of a high-k gate dielectric markedly improves the TFET performance in terms of average slope and on-current, I_on. Furthermore, we investigate the low-temperature behaviour of the TFETs.

Keywords

elemental semiconductors; field effect transistors; hafnium compounds; high-k dielectric thin films; nanoelectronics; nanofabrication; nanowires; silicon; silicon compounds; tunnel transistors; Si-HfO₂; Si-SiO₂; TFET; high-k gate dielectric; high-k gate stack; low-temperature behaviour; silicon nanowires; tunnel FET; tunneling field effect transistors; Doping; FETs; Fabrication; Geometry; Helium; High K dielectric materials; High-K gate dielectrics; Nanowires; Temperature; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European

Conference_Location

Athens

ISSN

1930-8876

Print_ISBN

978-1-4244-4351-2

Electronic_ISBN

1930-8876

Type

conf

DOI

10.1109/ESSDERC.2009.5331446

Filename

5331446