Title :
Magnetic field induced gate leakage current in 65nm nMOS transistors
Author :
Gutiérrez-D, Edmundo A. ; Molina-R, J. ; García-R, P.J. ; Martínez-C, J. ; Guarin, F.
Author_Institution :
Dept. of Electron., INAOE, Puebla, Mexico
Abstract :
We present experimental evidence that reveals steady state and transient magnetic fields modulate gate current leakage in MOS transistors and produce channel current interference. This steady- and transient-state electromagnetic interference is attributed to surface channel charge and mobility space- and time-modulation, as validated by Minimos-NT electromagnetic numerical simulations.
Keywords :
MOSFET; electromagnetic interference; electron mobility; leakage currents; magnetic field effects; Minimos-NT electromagnetic numerical simulation; channel current interference; electromagnetic interference; magnetic field induced gate leakage current; mobility space modulation; nMOS transistor; size 65 nm; steady state magnetic field; surface channel charge; time modulation; transient magnetic field; Current measurement; Electromagnetic transients; Electrons; Interference; Leakage current; MOSFETs; Magnetic field measurement; Magnetic fields; Magnetic modulators; Steady-state;
Conference_Titel :
Solid State Device Research Conference, 2009. ESSDERC '09. Proceedings of the European
Conference_Location :
Athens
Print_ISBN :
978-1-4244-4351-2
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2009.5331452
