Title :
A new analytical GTO-model for circuit applications
Author :
Bayer, M. ; Kraus, R. ; Hoffmann, K.
Author_Institution :
Univ. of Bundeswehr Munich, Neubiberg, Germany
Abstract :
This paper presents an analytical model of a GTO based on the calculation of the charge carrier distribution in the base layers by an approximation of the time derivatives. All essential effects like avalanche breakdown, recombination, backinjection into the high doped emitter and conductivity modulation are included. The reliability of the method is confirmed by a comparison of the simulation and measurement results and by the capability of the model in mastering very complex application circuits
Keywords :
approximation theory; avalanche breakdown; circuit analysis computing; digital simulation; electron-hole recombination; power engineering computing; semiconductor device models; semiconductor doping; software packages; thyristors; GTO; Saber; analytical model; approximation; avalanche breakdown; backinjection; base layers; charge carrier distribution; complex application circuits; conductivity modulation; high doped emitter; recombination; reliability; simulation; time derivatives; Analytical models; Charge carriers; Circuit analysis; Circuit simulation; Electrons; Equations; Equivalent circuits; Medical simulation; Switches; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 1995. PESC '95 Record., 26th Annual IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7803-2730-6
DOI :
10.1109/PESC.1995.474920
