Compact Modeling of MOSFET with VHDL-AMS language

The paper describes a MOSFET physical based model with the lumped-charge technique. For the correct description of the static and dynamic behavior the model is based on charge nodes that represent the active charges in the device. Models that are based on charge equations are simulated accurately when the conservation charge is guaranteed. The capacitances are described with the capacitance EKV model that is also based on charge equations. The modification caused to the threshold voltage due to non-uniform substrate doping is also presented. The model is developed and simulated thanks to VHDL-AMS language