Title :
The electret properties of SiO2 films prepared by sol-gel process
Author :
Zhongfu, XIA ; Yang, Cao
Author_Institution :
Pohl Inst. of Solid State Phys., Tongji Univ., Shanghai, China
Abstract :
Improved SiO2 electret films prepared by the sol-gel process are described. The electret properties of the SiO2 films, including charge stability, and transport of negatively detrapped charges in the bulk, were studied. Two models were employed to simulate the growth of acid and base catalysed samples. By applying the image processing technique of SEM photography and electrical conductivity glow curves, it was found that the sol-gel oxide for electret purpose should be prepared in the acid system
Keywords :
electrets; electrical conductivity; heat treatment; insulating thin films; scanning electron microscopy; silicon compounds; sol-gel processing; thermally stimulated currents; SEM; SiO2; SiO2 films; acid catalysed samples; base catalysed samples; charge stability; electret properties; electrical conductivity glow curve; image processing technique; models; negatively detrapped charge transport; sol-gel process; Aging; Chemicals; Coatings; Electrets; Heat treatment; Human computer interaction; Spinning; Stability; Temperature; Water storage;
Conference_Titel :
Electrets, 1994. (ISE 8), 8th International Symposium on
Conference_Location :
Paris
Print_ISBN :
0-7803-1940-0
DOI :
10.1109/ISE.1994.514751
